Low-frequency noise measurements in silicon power MOSFETs as a tool to experimentally investigate the defectiveness of the gate oxide

Authors

  • Paolo Magnone
  • Pier Andrea Traverso
  • Giacomo Barletta
  • Claudio Fiegna

DOI:

https://doi.org/10.5821/iwp.2013.14.15506

Issue

No. 14 (2013)

Section

Articles

License

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